首页> 外文会议>Symposium on Science and Technology of Magnetic Oxides December 1-4, 1997, Boston, Massachusetts, U.S.A. >Effects of locatized holes on charge transport, local structure and spin dynamics in the metallic state of CMR La_(1-x)Ga_xMnO_3
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Effects of locatized holes on charge transport, local structure and spin dynamics in the metallic state of CMR La_(1-x)Ga_xMnO_3

机译:在CMR La_(1-x)Ga_xMnO_3的金属状态下,空穴对电荷输运,局部结构和自旋动力学的影响

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We review resistivity, x-ray-absorption fine-structure (XAFS) and muon spin relaxation ( mu SR) data which provide clear evidence for localized holes causing polaron distortion and unusal spin dynamics below T_C in "colossal magnetoresistive" (CMR) La_(1-x)Ga_xMnO-3. Resistivity measurements for x chemical bounds 0.33 under an applied field H have shown that In[ rho (H, T)] propor.to -M, where M is the magnetization. The XAFS data show a similar functional dependence for the polaron distortions on M. The data from these two measurements are interpreted n terms of some fraction of the vailable holes x remaining localized and some increasing fraction becoming delocalized with increasing M. Finally, this polaron-induced spatial inhomogeneity yeids anomalously slow, spatially inhomogeneous spin dynamics below T_C, as shown in the mu SR data. These experiments individually probe the charge, lattice and spin degrees of freedom in this CMR system and suggest that the polarons retain some identity even at temperatures significantly below T_C.
机译:我们回顾了电阻率,x射线吸收精细结构(XAFS)和μ子自旋弛豫(mu SR)数据,这些数据为“巨大磁阻”(CMR)La_(T_C以下)引起极化子畸变和异常自旋动力学的局部空穴提供了明确的证据。 1-x)Ga_xMnO-3。在外加磁场H下x的化学界0.33的电阻率测量结果表明In [rho(H,T)]与-M成正比,其中M为磁化强度。 XAFS数据显示出极化子畸变对M的相似函数依赖性。这两次测量的数据被解释为n个可用孔的一部分x保持局部化,而某些增加的部分随着M的增加而离域。如mu SR数据所示,在T_C以下诱发的空间非均匀性异常异常缓慢,空间非均匀性自旋动力学。这些实验分别探测了该CMR系统中的电荷,晶格和自旋自由度,并表明即使在明显低于T_C的温度下,极化子也能保持一定的身份。

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