Perovskite-structured La_xSr_yMnO_3 thin-films have been deposited onto LaAlO_34 substrates via liquid delivery chemical vapor deposition (LD-CVD) using metal( beta -diketonato) precursors, M(the)_x [where M chemical bounds Ca, Sr, La and Mn, thd chemical bounds 2, 2, 6, 6-tetramethyl-3, 5-heptanedionato and x chemical bounds 2-3]. Tin films were dpeosited at temperatures between 500 and 700 deg C and subsequently annealed at 1000 deg C under O_2. These fils possess stocihiometries that are: i) vastly different from the La_(0.67)Sr_*0.33)MnO_3 compositions commonly reported in the literature and ii) display high temperature, low field responses that may be technologically important. Resistance versous temperature measurements revealed a metal to semiconductor transition at room temperature and above. Hall measurements on a film lf La_(0.35)Sr_(0.24)MnO_3 displayed a magnetorsistive response (MR) of-10
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