首页> 外文会议>Symposium Proceedings vol.887; Symposium on Degradation Processes in Nanostructured Materials; 20051128-1201; Boston,MA(US) >Degradation Phenomenon in Semiconductive Nanoamorphous Structures from Molybdenum Oxide
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Degradation Phenomenon in Semiconductive Nanoamorphous Structures from Molybdenum Oxide

机译:氧化钼在半导体纳米非晶结构中的降解现象

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摘要

The condition of degradation of electrical properties of samples prepared from powder of nanoamorphous semiconductive oxide in the course of time is discovered and studied when investigating electro-physical properties of the given materials for the first time synthesized at Scientific Production Enterprise "ATOM". It has been shown that degradation phenomenon is also present in amorphous materials, which relies on the configuration of the pores of the sample. The resistance of sample in the open air changes over a period of several months. However, it decreases and is comparatively fast stabilized when placed in vacuum. The absorption and de-absorption of different gases have diffusion nature and highly depend on environment temperature. Water steam in atmosphere has been determined to be the main cause of degradation.
机译:在科学生产企业“ ATOM”首次调查给定材料的电物理性能时,发现并研究了由纳米非晶态半导体氧化物粉末制备的样品随时间推移电性能下降的条件。已经显示出降解现象也存在于无定形材料中,这取决于样品的孔的构型。样品在露天的电阻会在几个月内变化。但是,当它置于真空中时,它会减少并相对快速地稳定下来。不同气体的吸收和解吸具有扩散性质,并且高度依赖于环境温度。已确定大气中的水蒸汽是降解的主要原因。

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