首页> 外文会议>Symposium Proceedings vol.833; Symposium on Materials, Integration and Packaging Issues for High-Frequency Devices II; 20041129-1201; Boston,MA(US) >Recent Advances in Microwave Applications of Thin Ferroelectric Films at the NASA Glenn Research Center
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Recent Advances in Microwave Applications of Thin Ferroelectric Films at the NASA Glenn Research Center

机译:美国国家航空航天局格伦研究中心在铁电薄膜的微波应用方面的最新进展

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We report on recent developments in microwave applications and understanding of thin Ba_(50)Sr_(50)TiO_3 films. Most of our recent efforts have focused on developing low loss, wide band phase shifters from X-band (8.4 GHz) to Ka-Band (26.5 GHz) for scanning reflectarray antennas. Attempts to reduce tan8 by Mn-doping Ba_(50)Sr_(50)TiO_3 films are briefly discussed. We have demonstrated a hybrid device at X-band that produces in excess of 300 degrees of phase shift with about 3.5 dB insertion loss and greater that 10% bandwidth. Preliminary results are presented here. The effects of mild (600 rad Si) proton radiation on device performance will also be discussed. Preliminary results on optical phase shifters will be included.
机译:我们报道了微波应用中的最新进展以及对Ba_(50)Sr_(50)TiO_3薄膜的了解。我们最近的大部分努力都集中在开发从X波段(8.4 GHz)到Ka波段(26.5 GHz)的低损耗宽带移相器,用于扫描反射阵列天线。简要讨论了通过Mn掺杂Ba_(50)Sr_(50)TiO_3薄膜还原tan8的尝试。我们已经展示了一种在X波段产生超过300度相移的混合设备,其插入损耗约为3.5 dB,带宽大于10%。初步结果显示在这里。还将讨论轻度(600 rad Si)质子辐射对器件性能的影响。光学移相器的初步结果将包括在内。

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