Residual oxygen determination in silicon epilayer, comparison with ftir measurements

摘要

For power devies the use of silicon epilayer on CZ substrate is a solution to make devices with a low oxygen concentration in the active zone. Oxygen is probably one of the most important residual impurities in silicon samples. Usualy the determination of the interstitial oxygen is done by Fourier STransform Infra Red spectroscopy (FTIR). In this work we have determined osygen by Charged Particle Activation analysis (CPAA). The main difference between these two techniques is that CPAA gives the toal oxygen concentration whereas FTIR gives interstitial oxygen.