The exact control and adjustment of the etch parameters is important for the fabrication of well defined and reproducible devices based on porous silicon (PS) multilayers. In this paper the etch parameters "electrolyte volume" and "diffusion in the electrolyte" will be discussed as specific problems during a commercial fabrication of multilayer applications. Additionally the stability of the filter characteristics of multilayer systems will be analyzed by changing the climatic environments. New perspectives of multilayer applications will be given, e. g. the electrical control of filters, spatially graded interference filters and multiple interference filters on one sample.
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