MBE growth and characterization of Er/O and Er/F doped Si light emitting structures

摘要

By using a low temperature growth process, Er doping in Si during MBE using Er_2O_3 or ErF-3 as dopant sources has achieved a level of 5x10~19 cm~-3 without precipitation and generation of other extended defects. Luminescence properties of these Er-doped MBE Si structures have bene extensively studied using both photon and hot electron impact excitation at a wide range of temperatures (2-300 K). It has been found that by incorporating C into Er/O doped layers, the room temperature EL emission with a FWHM value of 14 meV was ten times more intense than that with lower C doping.Post thermal annealing gave a strong effect on Er/F doped layers, leading to a 7-fold increase of the highest peak intensity while the peak line width reduced to 0.12 meV, which is very importnat for laser applications.