Growth and magnetic anisotropy of polycrystalline (110) (NiFe/Ni/NiFe)/Cu multilayer on 4 deg tilt-cut Si(111)

摘要

[Cu(20A)/NiFe(7A)/Ni(6A)/NiFe(7A)]_10Cu(50A) multilayers were deposited on 4 deg tilt-cut Si(111) using 3-gun rf magnetron sputtering system. An in-plane uniaxial magnetic anisotropy was found and hte uniaxial magnetic anisotropy constant was about 3x10~4 erg/cm~3. the multilayers on non tilt-cut Si(111) with Cu underlayer did not show any anisotropy. The crystal structue of the multilayer on 4 deg tilt-cut Si(111) was studied using TEM work andthe magnetic other mateiral such as Ni or NiFe was used as an underlayer for the mutlilayer, the magnetic anisotropy disappeared and the crystal structure was (111). The multlayer without underlayer did not show any magnetic anisotropy either. It is thought that Cu underlayer was grown with (110) orientation on 4 deg tilt-cut Si(111) through the ledges in Si wafer and worked as a template for the growth of the mutlilayer.