首页> 外文会议>Symposium on Interconnects and Contact Metallization for ULSI Oct 17-22, 1999, Honolulu, HI >PULSED ELECTRODEPOSITION OF COPPER FROM ALKALINE AND ACID BATHS FOR METALLIZATION IN INTEGRATED CIRCUITS
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PULSED ELECTRODEPOSITION OF COPPER FROM ALKALINE AND ACID BATHS FOR METALLIZATION IN INTEGRATED CIRCUITS

机译:集成电路中碱金属和酸液中脉冲铜的电沉积

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Pulsed electroplating parameters for the electrodeposition of copper on patterned wafers were compared in alkaline and acid baths. In an alkaline bath with trace amounts of ethylenediamine added feature filling and smoothness were optimized for a reversed pulse cycles. In an acid bath containing commercial additives, the optimum parameters for good filling and smoothness were observed under direct current or forward pulse plating. The results of this work indicate that the specific plating parameters required for interconnects in integrated circuits are a strong function of the solution chemistry. In the case of alkaline baths, complexing of the copper results in a more uniform distribution of copper ion in the features and requires less dependence on mass transport and preferential nucleation of the copper plate.
机译:在碱性和酸性浴中比较了用于在图案化晶片上电沉积铜的脉冲电镀参数。在添加了微量乙二胺的碱性浴中,针对反向脉冲循环优化了特征填充和平滑度。在含有市售添加剂的酸浴中,在直流电或正向脉冲电镀条件下观察到了最佳填充和光滑度的最佳参数。这项工作的结果表明,集成电路中互连所需的特定电镀参数是溶液化学的重要功能。在碱性浴的情况下,铜的络合导致特征中铜离子的分布更加均匀,并且对质量传输的依赖性较小,并且不需要铜板的优先成核作用。

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