CHARGE-BASED DEEP LEVEL TRANSIENT SPECTROSCOPY OF SEMICONDUCTING AND INSULATING MATERIALS

摘要

The opportunity of the charge-based deep level transient spectroscopy (Q-DLTS) for study of the structures based on wide bandgap semiconducting and insulating materials such as diamond and Al_2O_3 was demonstrated. Using our isothermal Q-DLTS method with rate window (τ_m) scanning we obtained information about concentration, activation energy and capture cross-section of the native and extrinsic electrical active defects - trapping centers (TC) in slightly boron-doped polycrystalline diamond, diamond single-crystal and in the structures A1_2O_3 film on NiFe and Si substrates. In comparison with widely used capacitance-based deep level transient spectroscopy, Q-DLTS gives one possibility to investigate the structures in which a capacitance does not depend on the charge state of the surface and bulk traps.