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An ab initio Investigation on the Effects of Impurity in Aluminum Grain Boundary

机译:从头开始研究杂质对铝晶粒边界的影响

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摘要

The electronic structure of AlΣ9 tilt grain boundary with segregated impurity atoms of Na, Ca, Si and S, respectively, has been investigated by an ab initio pseudopotential method. Na and Ca segregation causes the boundary to expand and the charge density to decrease significantly. There forms several weak bond regions. Si segregation increases the charge density between Si and the neighboring Al atom. There forms a stronger Al-Si bond that is a mixture of covalent and metallic character in the boumdary. For S segregation, though there forms the stronger bond between Al and S atom, some Al-S bonds may become weaker than the former A1-A1 bonds because of the charge density decrease. It is concluded that the mechanism of Na or Ca-promoted Al grain boundary embrittlement is one kind of 'decohesion model', that of Si is 'bond mobility model'. It can't be decided the embrittlement mechanism by S segregation is classified into 'bond mobility model' or 'decohesion model'.
机译:通过从头算pseudo势方法研究了分别带有Na,Ca,Si和S杂质原子的AlΣ9倾斜晶界的电子结构。 Na和Ca的偏析会导致边界扩展,电荷密度显着降低。形成几个弱键区。 Si的偏析增加了Si与相邻的Al原子之间的电荷密度。形成更牢固的Al-Si键,该键是共价键和金属键的混合物。对于S偏析,尽管在Al和S原子之间形成较强的键,但由于电荷密度降低,某些Al-S键可能比以前的A1-A1键弱。结论是,Na或Ca促进的Al晶界脆化的机理是一种“脱粘模型”,而Si则是“键迁移模型”。 S偏析的脆化机理尚不能确定为“键迁移模型”还是“解聚模型”。

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