Electrically Active Deep Levels in ScN

摘要

We report the electronic characterization of n-ScN in ScN-Si heterojunctions using Deep Level Transient Spectroscopy of electrically active deep levels. ScN material was grown by plasma assisted physical vapor deposition and by reactive sputtering on commercial p~+ Si substrates. Deep level transient spectroscopy of the junction grown by plasma assisted physical vapor deposition shows the presence of an electronic trap with activation energy E_C-E_T= 0.51 eV. The trap has a higher concentration (1.2-1.6xl0~(13)cm~(-3)) closer to the ScN/Si interface. Junctions grown by sputtering also have an electronic trap, situated at about E_C-E_T= 0.90 eV.