Development of a large pixel spectrally optimized pinned photodiode/interline CCD detector for the Earth Observing System/Moderate-Resolution Imaging Spectrometer-Tilt Instrument

摘要

Abstract: A pinned photodiode/interline CCD detector array is under development for the EOS/MODIS-T project. Outstanding features of the device include large pixels, spectrally optimized fill factors, and blooming protection. The detector has 30 spatial rows and 32 spectral columns. The device layout is split into two halves. Each half has its own detector area, storage area, and output structure. The detector area contains the array of 161.7 $mu@m by 220.5 $mu@m pixels with two light sensitive photodiodes per pixel. The diodes are pinned to improve image lag and quantum efficiency. The interline CCD and antiblooming structures are connected in series to the photodiodes. The interline CCD is a four-phase transfer device which combines signal charge from both photodiodes of a detector pixel. The channel width of the interline CCD in each column is dimensioned to optimize the device fill factor in the corresponding spectral band. Each storage area contains a CCD register capable of holding signal from half of the detector. These CCDs are designed to provide an interface between the interline CCD channels (pitch $GRT 200 $mu@m) and the output register pixels (pitch $EQ 52 $mu@m). Each output register is a serial CCD that accepts charge packets in parallel from the storage areas. Charge packets are transferred to a floating diffusion output which converts the signal charge to a voltage difference. The 51 pad silicon chip is about a half inch square and fits into a standard 64 pin DIP package for testing.!