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Enhanced Photoresponse of Hydrogen-Modified (HM)-n-TiO_2 Thin Films for Water Splitting Reaction

机译:氢改性(HM)-n-TiO_2薄膜对水分解反应的增强光响应

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Hydrogen modified n-type titanium oxide (HM-n-TiO_2) thin film photoelectrodes were synthesized by thermal oxidation of Ti metal sheet (Alfa Co. 0.25 mm thick) in an electric oven and then hydrogen was incorporated electrochemically by hydrogen evolution on it under cathodic polarization. The photoresponse of the HM-n-TiO_2 was evaluated by measuring the rate of water splitting reaction to hydrogen and oxygen, which is proportional to photocurrent density j_p. The optimized electric oven-made n-TiO_2 and HM-n-TiO_2 photoelectrodes showed photocurrent densities of 0.2 mA cm~(-2) and 1.60 mA cm~(-2) respectively at measured potential of-0.4 V/Pt at illumination intensity of 100 mW cm~(-2) from a 150 Watt Xenon Lamp. This indicated an eight fold increase in photocurrent density at the same measured electrode potential. The band gap energy of HM-n-TiO_2 was found to be 2.7 eV (459 nm) and a mid-gap band at 1.67 eV (742 nm) above the valence band was observed. These HM-n-TiO_2 photoelectrodes were characterized using photocurrent density measurements under monochromatic light illumination, UV-Vis spectra, X-ray diffraction (XRD) and scanning electron microscopy (SEM).
机译:通过在电炉中热氧化钛金属片(Alfa Co. 0.25 mm)合成氢改性的n型二氧化钛(HM-n-TiO_2)薄膜光电电极,然后在氢气下通过氢放出使其电化学结合氢阴极极化。通过测量水分解反应对氢和氧的比率来评估HM-n-TiO_2的光响应,该比率与光电流密度j_p成正比。优化的电烤箱制造的n-TiO_2和HM-n-TiO_2光电极在光照强度下的实测电势为-0.4 V / Pt时,光电流密度分别为0.2 mA cm〜(-2)和1.60 mA cm〜(-2)。从150瓦的氙气灯获得100 mW cm〜(-2)这表明在相同的测量电极电位下,光电流密度增加了八倍。发现HM-n-TiO_2的带隙能为2.7 eV(459 nm),在价带上方观察到1.67 eV(742 nm)的中带隙。这些HM-n-TiO_2光电电极使用单色光照射下的光电流密度测量,UV-Vis光谱,X射线衍射(XRD)和扫描电子显微镜(SEM)进行表征。

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