Intel, Hillsboro, OR;
CMOS integrated circuits; microprocessor chips; parallel processing; SIMD vector processing engines; high-throughput parallel SIMD vector computations; metal-gate CMOS; power-constrained mobile microprocessors; power-critical operations; reconfigurable dual-supply SIMD vector processing accelerator; short bit-width arithmetic operations; signal processing workloads; size 45 nm; voltage 300 mV;
机译:采用45 nm CMOS的300 mV 494GOPS / W可重配置双电源4路SIMD矢量处理加速器
机译:280 mV至1.1 V 256b可重配置SIMD矢量置换引擎,在22 nm Tri-Gate CMOS中具有二维混洗
机译:在硬件/软件代码签名环境中通过动态选择性去矢量化对SIMD加速器进行有效的功率门控
机译:300MV 494G0PS / W可重新配置的双电源4路SIMD矢量加工加速器45nm CMOS
机译:利用SIMD和关联处理器对实时应用的促进剂的性能比较
机译:具有矢量加速器的45nm 1.3GHz 16.7双精度GFLOps / W RIsC-V处理器