Optical gate realization by laser crossing in thin-film semiconductors on glass

摘要

We investigated a novel possibility to attain all-optical logical gates. The host of the device was a thin-filmsemiconductor (CdS, GaAs, InP) on glass produced by various methods (pulsed-laser deposition and metal organicchemical vapor deposition). In the thin-film two visible laser beams, the primary and secondary ray, were crossed in thesame spot. In this way, the secondary beam caused a transmission decrease in the primary beam. Laser crossing is anextremely undemanding concept based on electronic absorption alterations. Apparently, every semiconductor can beused for laser crossed all-optical logics and, in contrary to other semiconductor based concepts, laser crossing does notdemand specific materials, material qualities or nonlinear features. The unmatched overall simplicity and possible THzoperations recommend laser crossing for the realization of all-optical digital devices.