GaSb-based lasers for spectral region 2 – 4 μm: challenges and limitations

摘要

Laser sources operating in spectral region 2 - 4 μm are in demand for ultra-sensitive laser spectroscopy, medicaldiagnostics, home security, industrial process monitoring, infrared countermeasures, optical wirelesscommunications, etc. Currently, solid state lasers and optical parametric oscillators and amplifiers are used ascoherent light sources in this spectral region. Solid state and parametric sources are being optically pumped by nearinfrared diode lasers. This intermediate energy transfer step from near infrared pumping diode to mid infraredemitting device reduces power-conversion system efficiency. Development of the highly efficient semiconductordiode lasers operating in 2 - 4 μm spectral region will significantly improve the performance of the many existingsystems and enable new applications.In this work we will describe major breakthrough in the development of the high power room temperatureoperated mid-IR semiconductor lasers. The performance limitations of the devices based on type-I and type-IIquantum well (QW) active region design will be analyzed. Future directions in device performance optimization andenhancement of the wavelength for high power room temperature operation will be discussed.