One small step: World’s first integrated EUVL process line

摘要

The Intel lithography roadmap calls for Extreme Ultraviolet Lithography (EUVL) to be used for the 32 nm node. Withthe installation of the EUV Micro-Exposure Tool (MET) complete, Intel now has the world’s first integrated EUVLprocess line including the first commercial EUV exposure tool. This process line will be used to develop the EUVtechnology, including mask and resist, and to investigate issues such as defect printability. It also provides a test-bed todiscover and resolve problems associated with using this novel technology in a fab (not lab) environment. Over 22,000fields have been exposed, the discharge-produced plasma light source has operated for 50,000,000 pulses, 8 masks havebeen fabricated, and 8 resists have been characterized. The MET combines high resolution capability with Intel’sadvanced processing facilities to prepare EUVL for high-volume manufacturing (HVM).In this paper we review the MET installation and facilities, novel capabilities of the linked track, data on optics qualityand modeled tool capability, and the MET mask fabrication process. We present data on tool performance includingprinting 45 nm ½ pitch lines with 160 nm depth of focus and 27 nm isolated lines. We show tool accuracy andrepeatability data, and discuss issues uncovered during installation and use.