首页> 外文会议>Silicon science and advanced micro-device engineering I >Theoretical Analysis of Photonic Band Gaps and Defect Modes of Novel Photonic Crystal Waveguides Consisting of Si-Ion Implanted SiO_2 Using the Finite-Difference Time-Domain Method
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Theoretical Analysis of Photonic Band Gaps and Defect Modes of Novel Photonic Crystal Waveguides Consisting of Si-Ion Implanted SiO_2 Using the Finite-Difference Time-Domain Method

机译:有限差分时域法对硅离子注入SiO_2组成的新型光子晶体波导的光子带隙和缺陷模式进行理论分析

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In this paper, photonic crystals (PC) based on 2-D periodic arrays of air holes were investigated on Si-ion implanted SiO_2 using finite-difference time-domain (FDTD) simulations. The PC design parameters based on the telecommunication wavelength (λ=1.55 um) were obtained by varying the radius to lattice constant ratio (r/a) from 0.2 to 0.45. We analyzed both transverse electric (TE) and transverse magnetic (TM) mode propagation in triangular-lattice PCs. The result obtained shows that a PC bandgap (PBG) exists for TE-mode propagation in the Si-ion implanted SiO_2 patterned 2-D triangular lattice of air holes. We have also calculated the dispersion relations for the TE mode of a line defect in the structure and shown a fabricated sample. These analyses are obviously important for fabricating novel PC waveguides, which can easily be integrated into the existing silicon technology for directing light from one part of a chip to the other.
机译:在本文中,使用有限差分时域(FDTD)仿真研究了基于气孔二维周期阵列的光子晶体(PC),该过程是在硅离子注入的SiO_2上进行的。通过将半径与​​晶格常数比(r / a)从0.2更改为0.45,可以获得基于电信波长(λ= 1.55 um)的PC设计参数。我们分析了三角晶格PC中的横向电(TE)和横向磁(TM)模式传播。获得的结果表明,在气孔中,Si离子注入的SiO_2图案化的二维三角晶格中存在PC带隙(PBG),用于TE模传播。我们还计算了结构中线缺陷的TE模式的色散关系,并显示了已制造的样品。这些分析对于制造新颖的PC波导显然很重要,该波导可以很容易地集成到现有的硅技术中,从而将光从芯片的一个部分引导到另一部分。

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