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High-power x-ray generation using transition radiation

机译:使用过渡辐射产生高功率X射线

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Abstract: In experiments using targets consisting of many thin metal foils, we have demonstrated that a narrow, forward-directed cone of transition radiation in the 0.8 to 60 keV spectral range can be generated by electron beams with moderate energies (between 17 and 500 MeV). We have measured the spectral and spatial photon densities of these radiators using low current electron beams. Using high currents, we have measured the total power of these radiators. A total power of 15.2 mW was measured from a beryllium radiator, 8.1 mW from the aluminum radiator, 4.8 mW from the titanium radiator, and 3.6 mW from the copper radiator. These values matched calculated predictions within experimental error. Both x-ray lithography for the production of integrated circuits and Laue diffraction for the study of biological materials are possible applications of this radiation. In particular, using the Al and Be radiators we have exposed photoresist-coated silicon wafers. Exposure times of the bare resist were as short as 120 s for 5 cm$+2$/ of wafer area (this resist had a 230 mj/cm$+2$/ energy dose per unit area). The shortest time for mask/wafer exposure was 180 seconds for 5 cm$+2$/. Using an Intel mask, we obtained lithographs with features of 0.5 $mu@m. In addition, we have calculated that the quasi-monochromatic bandwidth of transition radiation would be feasible for Laue diffraction of biological crystals. By designing transition radiators to emit x rays at the foil material's K-, L-, or M-shell photo-absorption edge, the x-ray spectrum is narrowed. The sources is then quasi-monochromatic and uses an electron beam whose energy is considerably lower than that needed for synchrotron sources.!32
机译:摘要:在使用由许多薄金属箔组成的目标的实验中,我们证明了中等能量(17至500 MeV之间的电子束)可以产生0.8至60 keV光谱范围内的狭窄的前向过渡锥)。我们已经使用低电流电子束测量了这些辐射器的光谱和空间光子密度。使用大电流,我们测量了这些散热器的总功率。铍辐射器的总功率为15.2 mW,铝辐射器的总功率为8.1 mW,钛辐射器的总功率为4.8 mW,铜辐射器的总功率为3.6 mW。这些值与实验误差内的计算预测相匹配。用于生产集成电路的X射线光刻和用于研究生物材料的劳厄衍射都可能是这种辐射的应用。特别是,使用Al和Be辐射器,我们已经曝光了涂有光刻胶的硅晶片。对于5cm 2 + 2 /晶片面积,裸抗蚀剂的曝光时间短至120s(该抗蚀剂每单位面积具有230mj / cm 2 +能量/能量剂量)。 5 cm $ + 2 $ /的掩模/晶圆曝光时间最短为180秒。使用英特尔掩模,我们获得了具有0.5μm@m的光刻能力。另外,我们已经计算出过渡辐射的准单色带宽对于生物晶体的劳厄衍射是可行的。通过设计过渡辐射器在箔材料的K壳,L壳或M壳的光吸收边缘发出X射线,可以缩小X射线光谱。然后,这些源是准单色的,并使用能量远低于同步加速器源所需能量的电子束。32

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