首页> 外文会议>The Seventh Workshop on Non-Neutral Plasma Physics; Jul 8-11, 2003; Santa Fe, New Mexico >High Voltage Amplifier Designs for Penning and Radio-Frequency Traps
【24h】

High Voltage Amplifier Designs for Penning and Radio-Frequency Traps

机译:用于Penning和射频陷阱的高压放大器设计

获取原文
获取原文并翻译 | 示例

摘要

Two economical designs for high voltage amplifiers are described, and the performance of constructed units is characterized. The first amplifier is based on a design originating from the non-neutral plasma group at UC San Diego, and is useful for driving capacitive loads such as the containment rings of Penning traps. The second is based on a design published by the Jones group of the University of Utah Chemistry Department, and is designed to power radio-frequency (rf) guides and traps. Complete design specifications including schematics, PC board files and circuit simulation inputs are available for those interested in building either amplifier.
机译:描述了高压放大器的两种经济设计,并描述了所构建单元的性能。第一个放大器基于源自圣地亚哥圣地亚哥分校的非中性等离子体组的设计,可用于驱动电容性负载,例如Penning阱的密封环。第二种是基于由犹他大学化学系的Jones小组发布的设计,并旨在为射频(rf)导向器和阱供电。完整的设计规格,包括原理图,PC板文件和电路仿真输入,可供有兴趣构建任一放大器的人员使用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利