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DOMAIN STUDIES OF ELECTROPLATED HIGH MOMENT CoFe AND Ni_(45)Fe_(55) ON TEST STRUCTURES

机译:电镀高强度CoFe和Ni_(45)Fe_(55)在测试结构上的域研究

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Magnetic properties of high moment magnetic materials for write head applications were measured for various geometries and anneal conditions. CoFe and Ni_(45)Fe_(55) were electroplated on different test structures with 3-D topography as well as on flat surfaces. Stripes of magnetic material with different width ranging from 5 μm to 50μm are formed using a photo lithographic process. The resist thickness is 3μm and the seed layer was 800 A Ni_(45)Fe_(55) sputtered onto 47mmx47mm glass substrates. The thickness of the electroplated CoFe is between 0.8 urn and 1.8 μm and the electroplated Ni_(45)Fe_(55) is approximately 1.2μm thick. Both B-H loops and domain imaging confirm that the easy axis of the films switches to a direction parallel to the stripes after plating although a magnetic field of 700-1200 Gauss was applied perpendicular to the stripe direction during plating. Another design consists of two layers of photo resist stripes with 20 μm width. These two layers of photo resist stripes are oriented perpendicular to each other. A Ni_(45)Fe_(55) seed layer was sputtered between these layers to provide a conductive surface for electroplating. Domain studies reveal that the preferred transverse domain orientation can be achieved by optimizing the hard-bake conditions for the first layer of photo resist, and for different high moment materials, these conditions need to be optimized individually. This study has potential applications for the domain control in the yoke of write heads for high density and high data rate magnetic recording.
机译:针对各种几何形状和退火条件,测量了用于写头应用的高力矩磁性材料的磁性能。将CoFe和Ni_(45)Fe_(55)电镀在具有3-D形貌的不同测试结构以及平坦表面上。使用光刻工艺形成宽度范围从5μm到50μm的磁性材料条。抗蚀剂厚度为3μm,种子层为800 A Ni_(45)Fe_(55),溅射在47mmx47mm玻璃基板上。电镀CoFe的厚度在0.8 um至1.8μm之间,电镀Ni_(45)Fe_(55)的厚度约为1.2μm。尽管在镀覆过程中垂直于条纹方向施加了700-1200高斯的磁场,但B-H回路和畴成像都证实了镀膜后薄膜的易轴转向平行于条纹的方向。另一种设计包括两层宽度为20μm的光致抗蚀剂条。这两层光致抗蚀剂条彼此垂直取向。在这些层之间溅射Ni_(45)Fe_(55)种子层,以提供用于电镀的导电表面。畴研究表明,可以通过优化第一光刻胶层的硬烘烤条件来实现最佳的横向畴取向,对于不同的高力矩材料,这些条件需要单独进行优化。这项研究在用于高密度和高数据速率磁记录的写头磁轭中的域控制中具有潜在的应用。

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