Abstract: Among the attractive features of microcavity lasers for practical applications are the potential for reduced thresholds and the ability to design a mode structure with nearly ideal single mode operation. One of the most important parameters for semiconductor lasers is the linewidth. Generally the linewidth in semiconductor lasers is proportional to the inverse of the output power. In this work, we examine the lasing behavior of microdisk lasers, consisting of InGaP/InGaAsP/InP MQW structure, optically pumped at liquid nitrogen temperature by Ar ion laser. A decrease of threshold of the microdisk laser is observed. The linewidth of the lasing spectrum is measured at various pumping level. It turns out that the measured linewidth is broad and in the range of nanometer. The linewidth does not display the usual inverse power dependence, i.e., Schalow- Townes linewidth narrowing.!13
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