首页> 外文会议>Royal Microscopical Society Conference, Mar 25-29, 2001, Oxford University >A comparison of chemical bath deposition and spray pyrolysed Cd-free buffer layers in CuInS_2 solar cells by TEM cross-section analysis
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A comparison of chemical bath deposition and spray pyrolysed Cd-free buffer layers in CuInS_2 solar cells by TEM cross-section analysis

机译:TEM截面分析法比较CuInS_2太阳能电池中化学浴沉积和喷涂热解无Cd缓冲层的比较

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摘要

With the aim of developing a Cd-free chalcopyrite solar cell, In(OH)xSy and ZnO buffer layers have been deposited by chemical bath deposition and the more novel approach of ultrasonic spray pyrolysis. Cross-sections of the completed solar cell devices were cut using a focused ion beam system and inspected using transmission electron microscopy. The TEM images of the buffer layers, prepared using the two deposition techniques are compared and correlated to the illuminated current-voltage curves of the solar cells.
机译:为了开发无镉的黄铜矿太阳能电池,In(OH)xSy和ZnO缓冲层已通过化学浴沉积和超声喷雾热解的更新颖方法进行了沉积。使用聚焦离子束系统切割完成的太阳能电池装置的横截面,并使用透射电子显微镜检查。比较使用两种沉积技术制备的缓冲层的TEM图像,并将其与太阳能电池的照明电流-电压曲线相关联。

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