首页> 外文会议>Reviews and Short Notes to Nanomeeting 2003 on Physics, Chemistry and Application of Nanostructures May 20-23, 2003 Minsk, Belarus >NANO-SIZE SnO_2 FILMS DEPOSITED BY SILD METHOD: STRUCTURAL AND GAS RESPONSE CHARACTERIZATION
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NANO-SIZE SnO_2 FILMS DEPOSITED BY SILD METHOD: STRUCTURAL AND GAS RESPONSE CHARACTERIZATION

机译:SILD方法沉积的纳米SnO_2薄膜:结构和气体响应特性

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摘要

The SILD (successive ionic layer deposition) technology for fabrication of nanoscaled SnO_2 films is presented. The technology allows to deposit porous agglomerated films consisting of nano-size grains. Even after annealing at 800℃ the average size of crystallites does not exceed 6-7 nm. These SnO_2 films have good gas response especially to ozone and H_2.
机译:介绍了用于制备纳米级SnO_2薄膜的SILD(连续离子层沉积)技术。该技术可以沉积由纳米晶粒组成的多孔团聚膜。即使在800℃退火后,微晶的平均尺寸也不会超过6-7 nm。这些SnO_2薄膜尤其对臭氧和H_2具有良好的气体响应。

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