Characterization techniques for semiconductors and nanostructures: a review of recent advances

摘要

Optical spectroscopy techniques are widely used for the characterization of semiconductors and nanostructures. Confocal Raman microscopy is useful to retrieve chemical and molecular information at the ultimate submicrometer resolution of optical microscopy. Fast imaging capabilities, 3D confocal ability, and multiple excitation wavelengths, have increased the power of the technique while making it simpler to use for material scientists. Recently, the development of the Tip Enhanced Raman Spectroscopy (TERS) has opened the way to the use of Raman information at nanoscale, by combining the resolution of scanning probe microscopy and chemical selectivity of Raman spectroscopy. Significant advances have been reported in the field of profiling the atomic composition of multilayers, using the Glow Discharge Optical Emission Spectroscopy technique, including real-time determination of etched depth by interferometry. This allows the construction of precise atomic profiles of sophisticated multilayers with a few nm resolution. Ellipsometry is another widely used technique to determine the profile of multilayers, and recent development have provided enhanced spatial resolution useful for the investigation of patterned materials. In addition to the advances of the different characterization techniques, the capability to observe the same regions at micrometer scale at different stages of material elaboration, or with different instrument, is becoming a critical issue. Several advances have been made to allow precise re-localization and co-localization of observation with different complementary characterization techniques.