Influence of low energy H~- ion implantation on the electrical and material properties of quaternary alloy (In_(0.21)Al_(0.21)Ga_(0.58)As) capped InAs/GaAs n-i-n QDIPs

摘要

The effect of low energy H~ ions implantation on the InAs/GaAs quantum dot infrared photodetectors had been studied. Light ion implantation was found to be an effective post growth technique which helped dark current density suppression by four orders in the implanted devices. In this study we had mainly concentrated on determining how the defect-related material and structural changes had an impact on dark current density reduction for InAs/GaAs quantum dot infrared photodetectors.