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Simulative study on the temporal evolution of the axial cathode plasma expansion velocity in pulsed magnetically insulated coaxial diode through voltage-ampere characteristics

机译:基于电压-安培特性的脉冲磁绝缘同轴二极管轴向阴极等离子体膨胀速度随时间变化的模拟研究

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A scaled-down particle-in-cell (PIC) simulation model is built to investigate the temporal evolutions of the axial cathode plasma expansion velocity through voltage-ampere characteristics in a pulsed magnetically insulated coaxial diode (MICD). The diode structure, voltage-ampere characteristics and cathode plasma expansion mechanism of MICDs are more complex than that of planar diodes. Unlike planar diodes, the axial plasma expansion velocity is difficult to investigate individually for MICDs. In this paper, the axial temporal evolution trend of “V”-shape profile and time-averaged velocity are studied through voltage-ampere characteristics method, which are confirmed by the linear ion density method.
机译:建立了按比例缩小的单元格粒子(PIC)仿真模型,以通过脉冲磁绝缘同轴二极管(MICD)中的电压-安培特性研究轴向阴极等离子体膨胀速度的时间变化。 MICD的二极管结构,电压-安培特性和阴极等离子体膨胀机理比平面二极管要复杂得多。与平面二极管不同,对于MICD很难单独研究轴向等离子体的膨胀速度。本文通过电压-安培特性法研究了“ V”形轮廓的轴向时间演化趋势和时均速度,并通过线性离子密度法得到了证实。

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