Atomic-layer epitaxy of YBaCuO for optoelectronic a

摘要

Abstract: A MOCVD based atomic layer epitaxy process is being developed as a potential solution to the problems of film thickness and interface abruptness control which are encountered when fabricating superconductor-insulator-superconductor (SIS) devices using YBa$-2$/Cu$-3$/O$-7$MIN@x$/. In initial studies, the atomic layer MOCVD process has yielded superconducting YBa$-2$/Cu$- 3$/O$-7$MIN@x$/ films with substrate temperatures of 605$DGR@C during film growth and no post deposition anneal. The low temperature process yields a smooth film surface and will reduce interface degradation due to diffusion.!4