Abstract: The semiconductor industry is moving toward thinner dielectric films (less than 100 angstroms), more complex film structures (oxide on polysilicon on oxide on silicon) and smaller lateral geometries (less than 1 micron). The attendant measurement requirements demand more than incremental improvement of existing methods. In this paper, a novel laser-based dielectric film measurement system is described that meets these requirements by bridging the gap between spectrophotometer speed and ellipsometer precision while measuring with a 0.9 micron focused laser spot. The operating principles of a new technique which we call beam profile reflectometry are discussed and data are presented for a number of different single- and multi-layer film structures relevant to microelectronics processing.!7
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