Evaluation of commercial SGOI and SSOI wafers and comparison with epitaxially grown strained-Si by means of laser confocal inspection system

摘要

Commercial SGOI and SSOI wafers are evaluated and compared with epitaxially grown strained-Si using laser confocal wafer inspection system. TEM and SIMS evaluation imply the film structures and compositions are quite consistent with their specifications. Particular defect was not clearly observed by introducing strain in the film. However, the numbers of SOI common defects were much larger than those in conventional SOI. Therefore, it can be concluded that the SGOI and SSOI wafers were still poor in quality as an SOI wafer.