Biolar doping of wide-bandgap semiconductors has ong been a problem. it has recently been overcome at least to a certain extent, by using "low temperature" growth techniques such as MBE. although the success of these techniques is obvious, it is not clar why it is so. A primary question in this concection is whether MBE does-or does not-take place in a uasi-equilibrium manner. We argue that this is often true for "undoped" material, but that dopant incorporation during the growth is often non-equilibrium. We analyze this problem via the "number of jumps" of an adation, rather than the previously used diffusion length, as we regard this a better approach. Further, we discuss the role of native defects, and of their, and of their complexes with dopants, in comensation. In conclusion we have given a comparison of results from high-and low-temperature growth.
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