Microcrystalline Silicon, a Right Material for Reliable Electronic Devices Fabricated at T<180°C

摘要

Microcrystalline silicon deposited at low temperature is shown to be a right material for the implementation of a low temperature technology leading to reliable and efficient CMOS electronic devices on any low temperature substrate such as transparent plastics. The technology is fully compatible with the present amorphous silicon technology tools. Efficient N-type and P-type doping is reached thanks to the excellent crystallinity of the silicon material deposited at 165°C. N-type and P-type TFTs are fabricated with demonstrated reliability and stability. Their threshold voltage can be externally adjusted. The association of these TFTs led to CMOS inverters with excellent pairing and ring oscillators.