首页> 外文会议>Proceedings of 4th IEEE International Conference on Applied System Invention >The property improvement of lead-free Li0.058(K0.535Na0.48)0.966(Nb0.9Ta0.1) O3-based (LKNNT-based) piezoelectric ceramics with high mechanical quality factor (Qm)
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The property improvement of lead-free Li0.058(K0.535Na0.48)0.966(Nb0.9Ta0.1) O3-based (LKNNT-based) piezoelectric ceramics with high mechanical quality factor (Qm)

机译:无铅Li 0.058 (K 0.535 Na 0.48 0.966 (Nb 0.9具有高机械品质因数(Q m )的 Ta 0.1 )O 3 基(LKNNT基)压电陶瓷

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In this study, LiF (Lithium Fluoride) and HfO2(Hafnium Oxide) were selected and doped with CuO (Copper Oxide) as a sintering promoter to improve the mechanical quality of Li0.058(K0.480Na0.535)0.966(Nb0.90Ta0.10) O3lead-free piezoelectric ceramics. A series of [Li0.058(K0.480Na0.535)0.966(Nb0.90Ta0.10) O3-(0.2 wt% LiF + 0.1 wt% HfO2)] + xCuO [LKNNT-(0.2L0.1H)] + x CuO(x= 0, 0.5, 0.75, 1, 2, 3, 4, 5 wt%) of lead-free piezoelectric ceramics were prepared by conventional solid state sintering. For a selected LiF content 0.2 wt% and HfO2content 0.1 wt%, a high density and high electromechanical coupling was achieved due to the modest addition of LiF and HfO2with the addition of 0.75 wt% CuO. Beside the mechanical quality factor Qmalso increased from 725 to 1,365. The specifications of this study including 98.82% of relative density, piezoelectric coefficient d33= 360 pC / N, dielectric constant kp= 48%, dielectric constant εr= 2,764, and dielectric loss tanδ = 1.1% are superior to other LKNNT-based ceramic.
机译:在这项研究中,LiF(氟化锂)和HfO \ n 2 \ n(氧化af)被选择并掺入CuO(氧化铜)作为烧结促进剂,以改善Li \ n 0.058 \ n(K \ n 0.480 \ nNa \ n 0.535\n)\n0.966\n(Nb\n 0.90 \ nTa \ n 0.10 \ n)O \ n 3 \无铅压电陶瓷。一系列[Li \ n 0.058 \ n(K \ n 0.480\nNa\n 0.535 \ n)\ n 0.966 \ n(Nb \ n 0.90 \ nTa \ n 0.10 \ n)O \ n 3 \ n-(0.2重量%LiF + 0.1重量%HfO \ n <子xmlns:mml = \“ http://www.w3.org/1998/Math/MathML \” xmlns:xlink = \“ http://www.w3.org/1999/xlink \”> 2 \ n)] + xCuO [LKNNT-(0.2L0.1H)] + xCuO(x =通过常规的固态烧结制备0、0.5、0.75、1、2、3、4、5重量%的无铅压电陶瓷。对于选定的LiF含量0.2 wt%,HfO 2 \ n含量0.1 wt%,由于适度添加LiF和HfO \ n 2 \ n 0.75重量%的CuO。除了机械品质因数Q \ n m \ n也从725增加到1,365。这项研究的规范包括相对密度的98.82%,压电系数d \ n 33\n= 360 pC / N,介电常数k \ n p \ n = 48 \\%,介电常数ε\ n <子xmlns:mml = \“ http://www.w3.org/1998/Math/MathML \” xmlns:xlink = \“ http://www.w3.org/1999/xlink \”> r n = 2,764,介电损耗tanδ= 1.1 \\%优于其他基于LKNNT的陶瓷。

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