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Analysis of temporal and spatial contact voltage fluctuation during fretting in automotive connectors

机译:汽车连接器微动过程中的时空接触电压波动分析

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摘要

Our study is focused on contact voltage fluctuations during fretting with small amplitudes of a few tens microns which generate damage of the contact of connectors. A contact composed by a pin and a curve female part are submitted to vibration cyclic of 25micrometer at 100Hz and supplied with current ramp from 0.1mA to 3A in two directions. With the help of fast devices, the voltage and position data acquisition are conjointly made with the common DC contact voltage during fretting. Some unexpected results state that voltage fluctuation occurs in the different stage of fretting and start at the beginning of test in the insertion direction and located at half of track. These small voltage fluctuations around few mV increased to few hundred millivolts and may reach few volt at ultimate phase of degradation with random distribution along the track. When the motion is stopped the ohmic conduction of such fretting interface is ensured only when the subsequent voltage stay below a sutured value depending on the degradation and current level. It is found that the common three phases of degradation have a different saturation voltage which appears at higher and higher current and induce voltage breakdown. Regarding that symmetric characterises is obtained in two the directions current ramp the semiconducting behaviour effect of oxide layers on debris particle is negligible. As voltage-current experimental data was well fitted to similar equation of granular material conduction we have deduced the fitting parameters (Vl and I0) of interface.
机译:我们的研究集中在微动过程中的接触电压波动上,该波动幅度为几十微米,会引起连接器触点的损坏。由针脚和弯曲的阴部组成的触点在100Hz处经受25微米的振动循环,并在两个方向上提供从0.1mA到3A的电流斜坡。在快速设备的帮助下,微动过程中,电压和位置数据的采集与普通的直流接触电压共同进行。一些出乎意料的结果表明,电压波动发生在微动的不同阶段,并开始于测试开始时的插入方向,位于磁道的一半。这些大约几mV的小电压波动会增加到几百毫伏,并且在降级的最终阶段可能会达到几伏,并且会沿着磁道随机分布。当运动停止时,仅当随后的电压取决于劣化和电流水平而保持在低于缝合值时才确保这种微动界面的欧姆传导。发现常见的退化三相具有不同的饱和电压,该饱和电压出现在越来越高的电流下并引起电压击穿。关于在两个方向上获得对称特性,电流倾斜,氧化物层对碎片颗粒的半导体行为影响可以忽略。由于电压-电流实验数据很好地拟合了颗粒材料传导的相似方程,我们推导出了界面的拟合参数(VI和I0)。

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