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Influence of technology conditions on the surface energy of porous silicon using the method of contact angle

机译:接触角法研究工艺条件对多孔硅表面能的影响

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The paper considers application of contact angle method (drop projection method) for investigation of the energy state of the por-Si surface. Porous silicon sets were obtained by electrochemical etching n-Si in HF solution under various anodization current densities (5..120 mA/cm2). There were 6 sets of samples analyzed. Hydrophilic and hydrophobic natures depend on preparation conditions were revealed. The results can be used to select the proper process conditions to produce a porous silicon targeted drug delivery, as well as for the introduction of nanoparticles, proteins, DNA, etc.
机译:本文考虑采用接触角法(液滴投影法)研究por-Si表面的能态。通过在各种阳极氧化电流密度(5..120 mA / cm2)下在HF溶液中对n-Si进行电化学蚀刻,可以获得多孔硅。分析了6套样品。亲水性和疏水性取决于制备条件。结果可用于选择合适的工艺条件以产生靶向多孔硅的药物递送,以及用于引入纳米颗粒,蛋白质,DNA等。

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