Switching behavior of RF-LDMOS for class-F power amplifier in TCAD

摘要

Nowadays the characterization of RF devices under large signal is performed in TCAD by using computational load-pull (CLP) simulation technique. In this paper, we modified the CLP simulation technique further to study the switching response of RF-LDMOS transistor for high efficiency switching power amplifier (e.g. class-F). In class-F PA operation, we achieved 85 % power added efficiency (PAE) together with 1.0 W/mm RF power density on the basis of finite harmonics. By this CLP technique, we can study the switching response of intrinsic RF-devices directly under large signal operation prior to fabrication or non-linear model of RF-transistor without including any external lumped matching networks.