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Electrophotographic properties of thiophene derivatives as charge transport material

机译:噻吩衍生物作为电荷传输材料的电子照相性能

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Abstract: The authors investigated electrophotographic properties of some substituted thiophenecarboxaldehyde-hydrazones as charge transport materials in layered-type photoreceptors from a viewpoint of molecular design. The values of optical bandgap $LBEg(opt)$RB of the polycarbonate films doped with the hydrazones decrease from 2.9 to 2.4 eV with increasing thiophene rings and, therefore, with increasing $pi@-conjugation length. The Eg(opt) values for the thiophene derivatives are smaller than those for phenyl derivatives. Hole mobilities in the polycarbonate films doped with the hydrazones (50% in weight ratio) fall in the range between 1$MUL@10$+MIN@6$/ and 5$MUL@10$+MIN@6 cm$+2$//Vsec. Any significant difference was not found between the hole drift mobilities for the thiophene derivatives and those for the phenyl derivatives. Hole mobility and charge injection efficiency of the thiophene derivatives increase with decreasing Eg(opt). The hydrazone derivatives with longer $pi@-conjugation length show higher hole mobility and higher charge injection efficiency. And the thiophene derivative shows higher injection efficiency and larger total carrier quantity than the phenyl derivative. The thiophene derivative is superior to the phenyl derivative as a charge transport dopant.!
机译:摘要:作者从分子设计的角度研究了一些取代的噻吩甲醛甲醛-作为层状感光体中电荷传输材料的电子照相性能。掺杂有hydr的聚碳酸酯薄膜的光学带隙$ LBEg(opt)$ RB的值随着噻吩环的增加而从2.9eV下降到2.4eV,因此,随着piπ共轭长度的增加。噻吩衍生物的Eg(opt)值小于苯基衍生物的Eg(opt)值。掺杂有hydr的聚碳酸酯薄膜(空穴重量比为50%)中的空穴迁移率介于1 $ MUL @ 10 $ + MIN @ 6 $ /和5 $ MUL @ 10 $ + MIN @ 6 cm $ + 2 $之间。 // Vsec。在噻吩衍生物和苯基衍生物的空穴迁移率之间未发现任何显着差异。噻吩衍生物的空穴迁移率和电荷注入效率随Eg(opt)的降低而增加。具有更长的π-共轭长度的衍生物显示出更高的空穴迁移率和更高的电荷注入效率。并且噻吩衍生物比苯基衍生物具有更高的注入效率和更大的总载流子量。噻吩衍生物作为电荷传输掺杂剂优于苯基衍生物。

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