A Large MOSFET and IGBT Lossless Gate Driver for High-Frequency Commutation

摘要

MOSFET and IGBT gate control is achieved by charging and discharging the input capacitance of the device. When we use a relatively simple charge and discharge circuit all of the energy received by the capacitor is dissipated in the passive and active components of the circuit. This may be acceptable when the value of the capacitance is low, e.g. 2 nF - 5 nF, maximum value of charge and discharge current does not exceed 4 A. When a conventional driver is used, the power dissipation in the driver is approximately 1 W or higher, with a commutation frequency 1MHz.