600V-IGBT~3: A detailed Analysis of Outstanding Static and Dynamic Properties

摘要

The paper discusses in detail eupec's and Infineon's latest 600V IGBT~3 technology. After introduction of the device fabrication technology the static and dynamic properties of the 3rd generation devices are analyzed in detail. A special focus is given on the prerequisites and consequences of the newly introduced maximum junction temperature of T_(jmax) = 175℃. It is shown that inverter efficiencies and output power may be improved by 10 - 30 % as compared to 2nd generation modules. Improvements of EMC-relevant features of the switching waveforms are discussed. The redefinition of the specified short circuit capability is discussed from a trade-off point of view between IGBT losses and short circuit withstand time.