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Tapered monolithic mode-locked laser diode with 200pJ pulse energy for space applications

机译:具有200pJ脉冲能量的锥形单片锁模激光二极管,适用于太空应用

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摘要

European Space Agency (ESA) considers Mode-Locked Semi-Conductor Lasers as a promising technology for precisionmetrology systems in space such as High Accuracy Absolute Long Distance Measurement. We report our progresstowards challenging ESA requirements: picosecond pulse duration, pulse energy 200 pJ, Pulse Repetition Frequency(PRF) 1-3 GHz, PRF stability < 5·10~(-9) at 1 second and PRF tunability 20 MHz. The laser should have small powerconsumption, be compact and robust against launch vibrations. We have reported in the past two such mode-locked(ML) laser diodes, each reaching only 90 pJ pulse energies: (ⅰ) very long (13.5mm) monolithic tapered laser and (ⅱ)inverse bow-tie external cavity (EC) laser. The subject of the present communication is a novel passively mode-lockedmonolithic tapered laser achieving 201 pJ pulses. Large optical cavity with 2QWs heterostructure provides a low internalloss (~1 cm~(-1)) together with high quantum efficiency (> 90 %) and low series resistance. To reach high energy outputpulses, the tapered gain section gets a low (< 0.1 %) reflectivity dielectric coating. For passive mode-locking atfundamental cavity frequency, the saturable electroabsorber section is located at the back side of the gain chip with ahigh reflectivity coating (> 95 %). The monolithic cavity is made 13.5mm long by introducing an intermediate sectionfor PRF tuning around 3 GHz. We reached passive ML at 2.9 GHz PRF with pulse energy of 201 pJ, compressed pulsewidth of 2.6 ps and electric power consumption of 8.2 W. PRF can be continuously tuned by 9.8 MHz. Active currentmodulation for hybrid ML resulted in PRF relative stability at 9.16·10~(-10) level on 1s intervals, while with a phase lockloop (PLL) acting on the DC gain section current we reached PRF stability of 1.15·10~(-10) on 1 s measurement interval.
机译:欧洲航天局(ESA)认为锁模半导体激光器是诸如高精度绝对长距离测量之类的空间精密\ r \ n计量学系统的有希望的技术。我们报告了我们朝着极具挑战性的ESA要求的进展情况:皮秒脉冲持续时间,脉冲能量200 pJ,脉冲重复频率\ r \ n(PRF)1-3 GHz,PRF稳定性<5·10〜(-9)在1秒时和PRF可调性20 MHz。激光器应具有较小的功率消耗,结构紧凑且坚固耐用,可抵抗发射振动。我们在过去曾报道过两个这样的锁模\ r \ n(ML)激光二极管,每个二极管仅达到90 pJ脉冲能量:(ⅰ)非常长(13.5mm)的整体式锥形激光器和(ⅱ)\ r \ ninverse bow系外腔(EC)激光器。本通信的主题是一种新颖的被动锁模单锥形锥形激光器,可实现201 pJ脉冲。具有2QWs异质结构的大光腔可提供较低的内部损耗(〜1 cm〜(-1)),较高的量子效率(> 90%)和较低的串联电阻。为了达到高能量输出\ r \ n脉冲,锥形增益部分将获得低反射率(<0.1%)的介电涂层。对于在基本腔频率处的无源锁模,可饱和的电吸收器部分位于增益芯片的背面,具有高反射率涂层(> 95%)。通过引入一个用于在3 GHz左右进行PRF调谐的中间部分,可以使单片腔长13.5mm。我们在2.9 GHz PRF处达到无源ML,脉冲能量为201 pJ,压缩脉冲宽度为2.6 ps,功耗为8.2W。PRF可以连续调谐9.8 MHz。混合ML的有功电流\ r \ n调制导致PRF在9.16·10〜(-10)电平上以1s的间隔相对稳定,而锁相环(PLL)作用于DC增益部分电流,我们达到了PRF 1 s测量间隔内的稳定性为1.15·10〜(-10)。

著录项

  • 来源
    《Novel In-Plane Semiconductor Lasers XVIII》|2019年|1093905.1-1093905.12|共12页
  • 会议地点 0277-786X;1996-756X
  • 作者单位

    Ⅲ-Ⅴ Lab, Campus de Polytechnique, 1, av. Augustin Fresnel, 91767 Palaiseau, France michel.krakowski@3-5lab.fr;

    Ⅲ-Ⅴ Lab, Campus de Polytechnique, 1, av. Augustin Fresnel, 91767 Palaiseau, France;

    Ⅲ-Ⅴ Lab, Campus de Polytechnique, 1, av. Augustin Fresnel, 91767 Palaiseau, France;

    Ⅲ-Ⅴ Lab, Campus de Polytechnique, 1, av. Augustin Fresnel, 91767 Palaiseau, France;

    Ⅲ-Ⅴ Lab, Campus de Polytechnique, 1, av. Augustin Fresnel, 91767 Palaiseau, France;

    Ⅲ-Ⅴ Lab, Campus de Polytechnique, 1, av. Augustin Fresnel, 91767 Palaiseau, France;

    Ⅲ-Ⅴ Lab, Campus de Polytechnique, 1, av. Augustin Fresnel, 91767 Palaiseau, France;

    Ⅲ-Ⅴ Lab, Campus de Polytechnique, 1, av. Augustin Fresnel, 91767 Palaiseau, France;

    Ⅲ-Ⅴ Lab, Campus de Polytechnique, 1, av. Augustin Fresnel, 91767 Palaiseau, France;

    Centre Suisse d’Electronique et de Microtechnique SA (CSEM), CH-2002 Neuchâtel, Switzerland;

    Centre Suisse d’Electronique et de Microtechnique SA (CSEM), CH-2002 Neuchâtel, Switzerland;

    Centre Suisse d’Electronique et de Microtechnique SA (CSEM), CH-2002 Neuchâtel, Switzerland Dmitri.BOIKO@csem.ch;

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