Microsystems Engineering, Kate Gleason College of Engineering, Rochester Institute of Technology, Rochester, New York, 14623, USA;
Microsystems Engineering, Kate Gleason College of Engineering, Rochester Institute of Technology, Rochester, New York, 14623, USA;
Microsystems Engineering, Kate Gleason College of Engineering, Rochester Institute of Technology, Rochester, New York, 14623, USA;
Microsystems Engineering, Kate Gleason College of Engineering, Rochester Institute of Technology, Rochester, New York, 14623, USA;
Microsystems Engineering, Kate Gleason College of Engineering, Rochester Institute of Technology, Rochester, New York, 14623, USA;
Indium tin oxide (ITO); modulator; electrolyte; attenuated total reflection (ATR); HfO_2;
机译:基于光电可调导电氧化物的红外超材料吸收器中的调幅
机译:使用透明导电银纳米颗粒二氧化硅层的硅上杂化等离子体结构的光学性质:导电氧化物层厚度在减反射中的作用
机译:3D透明导电氧化物:基于纳米线的三维透明导电氧化物电极,用于极快的电荷收集(Adv。Energy Mater。5/2011)
机译:具有透明导电氧化物的等离子和超材料
机译:基于透明氮化物和导电氧化物(TNCO)的工程Si兼容材料,用于宽带有源等离子体和超材料。
机译:基于包含透明导电氧化物的多材料纳米线的电可调超材料
机译:栅极可调透明导电氧化物等离子体
机译:用于红外等离子体波导的透明导电氧化物:ZnO(预印刷)。