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Green's function approach to study plasmonic luminescence enhancement in grated multilayer structures

机译:格林函数方法研究磨碎多层结构中的等离激元发光增强

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Surface plasmons (SPs) have recently gained substantial attention due to their sub-wavelength localization and strong interactions in the near-field. Their unique properties are expected to be essential for the next-generation photonic nanodevices, for instance, to improve light extraction in light-emitting diodes (LEDs). We discuss and develop a rigorous and transparent method to model luminescence enhancement and absorption in grated multilayer structures. The method is based on Green's functions, obtained as a perturbative solution to Maxwell's equations, and the fluctuational electrodynamics description of the structures. The model provides an analytical alternative to numerical methods such as finite-element methods and gives insight beyond the numerical solutions, offering a direct means of studying emission and luminescence from the periodic structures. The model is applied to answer key fundamental questions regarding luminescence enhancement, absorption and reflection in realistic plasmonic GaN light-emitting diode (LED) structures. Two aspects are considered in particular: (1) modeling the reflectometry measurements of grated LED structures to explain and map the interference patterns observed experimentally by our collaborators, and (2) modeling the enhancement in plasmonic structures where the emission takes place in quantum wells in the vicinity of the metallic grating. The results clearly reveal e.g. the SP-related luminescence enhancement in InGaN quantum well structures incorporating periodic silver grating.
机译:表面等离子体激元(SP)最近由于其亚波长定位和近场中的强相互作用而受到了广泛关注。预期它们的独特性能对于下一代光子纳米器件至关重要,例如,以改善发光二极管(LED)中的光提取。我们讨论并开发出一种严格而透明的方法来模拟磨碎多层结构中的发光增强和吸收。该方法基于格林函数(作为麦克斯韦方程组的扰动解而获得)以及结构的涨落电动力学描述。该模型提供了数值方法(例如有限元方法)的分析替代方案,并提供了数值解决方案之外的洞察力,为研究周期性结构的发射和发光提供了直接的方法。该模型用于回答有关现实等离子GaN发光二极管(LED)结构中的发光增强,吸收和反射的关键基本问题。特别要考虑两个方面:(1)对磨碎的LED结构的反射测量进行建模,以解释和绘制我们合作者实验观察到的干涉图;(2)对在等离子体阱中发生发射的等离子体结构的增强进行建模。金属格栅附近。结果清楚地表明例如包含周期性银光栅的InGaN量子阱结构中SP相关的发光增强。

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