Cu2ZnSnS4 (CZTS) polycrystalline thin films prepared by sol-gel method

摘要

Cu2ZnSnS4 (CZTS) thin films were prepared by annealing of spin-coated CZTS precursors. The CZTS precursors contain copper chloride, zinc chloride, tin chloride, thiourea and then were deposited on soda lime glass (SLG) and molybdenum-coated low-alkali glass substrates. The precursors were then annealed at 550 °C in different atmosphere. CZTS thin film annealed at 10 Torr with continuous flow of N2 showed a bandgap close to 1.40 eV and had continuously packed grains. Photovoltaic device with the structure of glass/Mo/CZTS/CdS/ZnO/ITO/Al was fabricated. A short-circuit current density of 5 mA/cm2 was achieved for the best cell which demonstrated a conversion efficiency of 0.63%.