There heterostructure arrangement on base of InGaAs compound is presented, that allows extending photocathode spectral response to IR region. Technological process of I~2 with photocathode assembly on the base of InGaAs is discussed. The best sample of the I~2 integral sensitivity 750 mkA/lm, spectral sensitivity at λ=1,06 mkm - 2, mA/Bt. Interest to photocathodes for long wave spectral region is not weakened for several reasons: 1. due to higher night sky radiation in this spectra region; 2. due to significant difference in reflectone of natural and artificial objects in region behind 0,9 urn; 3. due to appearance of effective laser radiator on the base of Nd:YAG with wave length 1,06 mkm and their radiation visualization possibility.
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