On the opportunity of increase of stability degree of parameters and characteristics of IR photoreceivers on the basis of Mo/CdS_(1-x)Se_x

摘要

The processes of photochemical reorganization of deep levels of the photoactive centers in films CdS_(1-x)Se_x (0 ≤ x ≤ 0.8) prepared onto molybdenum substrates by the method of electrochemical deposition were investigated. It is established that thermal annealing of investigated films in air at T_a = 380 / 400℃ for τ_a = 7 / 8 min leads to occurrence of new longwavelength maximum in the photosensitivity spectrum at λ = 0.95 - 1.15 μm (depending on the selenium content), which is due to oxygen-containing photoactive centers forming at disintegration of (V_(Cd) - Cd_i)~+ pairs. The mechanism of formation and disintegration of donor-acceptor pairs have been proposed and basic parameters of complex centers formed at thermal annealing were determined by the method of photocapacitance and photoconductivity spectroscopy.