4-level run-length limited optical storage on photo-chromic materials

摘要

4-Level Run-Length Limited (4L-RLL) optical storage based on photo-chromic materials is firstly investigated in this paper to our knowledge. Unlike binary recording, information in Multi-Level Run-Length Limited (ML-RLL) modulation system is carried in both the amplitude and length of the marks. ML-RLL optical storage can increase the recording density and data transfer rate with no changes to the optical/mechanical unit. For photo-chromic materials, different levels of input laser power amplitude give rise to different reflection levels. Using optimal write strategies, a 4 level linear playback signal was obtained and the sigma-to-dynamic range (SDR) of the 4-level signal was calculated. The results show that the SDR is low enough to provide low bits error rate (BER).