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AN ABSOLUTE RADIOMETER BASED ON InP PHOTODIODES

机译:基于InP光电二极管的绝对辐射仪

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摘要

InP-photodiodes from different manufacturers have got rather low noise level, a good response uniformity over the sensitive surface and a wide dynamic range. Therefore they are good devices to built radiometers in the NIR spectral region. As in any photodiode, the spectral short-circuit responsivity is determined by the wavelength and the photodiode's reflectance and internal quantum efficiency. Then if these quantities were known, the photodiode's responsivity would be known without being compared to another standard radiometer; i. e. the photodiode would be an absolute radiometer for optical radiation measurements.rnThis idea was firstly developed for silicon photodiodes in the eighties, once the technology was able to produce low defects photodiodes. Following this reference, the reflectance could be approached from a superimposed thin layers model. By knowing the thicknesses of the layers and the optical constants of the materials, it is possible to determine the device reflectance. However, this information is not completely available for InP photodiodes: the actual thickness of the layers is not known and optical constants of materials are only approximately known for bulk. Nevertheless it's possible to measure reflectance at some wavelengths and to fit the thicknesses of a layer model that would reproduce those experimental values. The internal quantum efficiency cannot be determined as in [1], since InP photodiodes are hetero-junctions rather than homo-junctions as silicon photodiodes are. In the other hand, since the internal structure is not accurately known, it is not possible to model the internal quantum efficiency without having experimental values for it.rnTherefore the attainable scope at present is just to obtain a model to be able to calculate spectral responsivity values at any wavelength. To get this, a model has been developed to calculate reflectance values from experimental ones at some wavelengths and another model has been developed to interpolate spectral internal quantum efficiency values from some values got from reflectance and responsivity measurements at some wavelengths. Both models will be presented in this communication.
机译:来自不同制造商的InP光电二极管具有较低的噪声水平,在敏感表面上的良好响应均匀性以及宽动态范围。因此,它们是在NIR光谱范围内构建辐射计的良好设备。像在任何光电二极管中一样,光谱短路响应度由波长,光电二极管的反射率和内部量子效率决定。然后,如果这些量已知,则无需与其他标准辐射计进行比较即可知道光电二极管的响应度;一世。 e。光电二极管将成为用于光辐射测量的绝对辐射计。这种技术一旦能够产生低缺陷的光电二极管,便在80年代首次被提出。根据该参考,可以从叠加的薄层模型获得反射率。通过了解层的厚度和材料的光学常数,可以确定器件的反射率。但是,对于InP光电二极管来说,此信息并不完全可用:层的实际厚度未知,而材料的光学常数对于体积而言仅近似已知。尽管如此,仍可以测量某些波长下的反射率,并适合将重现这些实验值的层模型的厚度。内部量子效率无法像[1]中那样确定,因为InP光电二极管是异质结而不是像硅光电二极管一样是同质结。另一方面,由于内部结构未知,无法在没有内部实验值的情况下对内部量子效率进行建模。因此,目前可获得的范围只是获得能够计算光谱响应度的模型。任何波长下的数值。为此,已经开发了一个模型来从某些波长下的实验值计算反射率值,并开发了另一个模型来从某些波长下的反射率和响应率测量值得到的光谱值内插光谱内部量子效率值。两种模型都将在本通讯中介绍。

著录项

  • 来源
    《Optical sensing and detection》|2010年|P.772628.1-772628.6|共6页
  • 会议地点 Brussels(BE)
  • 作者单位

    Facultad de Ingenieria Mecanica y Electrica (FIME) Universidad Autonoma de Coahuila U. Torreon. C. P. 27000, Torreon Coahuila, Mexico;

    rnInstituto de Fisica Aplicada, IFA-CSIC. C. P. 28006, Madrid, Espana;

    rnFacultad de Ingenieria Mecanica y Electrica (FIME) Universidad Autonoma de Coahuila U. Torreon. C. P. 27000, Torreon Coahuila, Mexico;

    rnFacultad de Ingenieria Mecanica y Electrica (FIME) Universidad Autonoma de Coahuila U. Torreon. C. P. 27000, Torreon Coahuila, Mexico;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TP212;
  • 关键词

    InP photodetectors; responsivity;

    机译:InP光电探测器;反应性;

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