Assessment and development of novel transition metal oxide materials as a photovoltaic sensor

摘要

Transition Metal Oxides (TMOs) are being developed for applications in medical ionising radiation safety and dosimetry. These materials exhibit a variety of properties, which must be fully understood in order to fully utilise their potential as novel photovoltaic sensors. TMOs have semi-conducting properties, showing either n-type or p-type characteristics. Thus, p-n junction diodes can be built by combining specific TMOs. Moreover, the TMOs exhibit other highly useful properties: they function successfully as semiconductors at room temperature, and they are cheap and simple to manufacture compared to many other semiconductors. The sensor manufacturing process involves a flame-spraying material deposition mechanism onto the substrate to form the sensor. This paper assesses the performance of the TMO materials and then addresses their possible applications after their full optimisation has been carried out. Analysis of the charge transport mechanism of the TMO sensors has been carried out with a view to improving their efficiency and signal-to-noise ratio. Further to this, analysis of the structure and properties of the TMOs has been carried out through electron microscopy. This analysis has indicated solutions to current limitations seen in the materials. Also, physical vapour deposition process for electrodes deposition is applied and tested.