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The study of the microwave absorption property of the Al and N codoped SiC Nanopowders

机译:Al和N共掺杂SiC纳米粉体的微波吸收性能研究

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Nanopowders of aluminum and nitrogen codoped fl-silicon carbide (P-SiC) were successfully produced by self-propagating high-temperature synthesis (SHS) in a nitrogen atmosphere. Characterizations by X-ray diffraction and scanning electron microscopy demonstrate the formation of Al-N codoped P-SiC nanopowders. In 1 MPa N_2 atmosphere, the X-ray analysis of the produced powders suggests that Al and N are accommodated in the lattice of SiC, which enlarges with increasing amounts of Al. The electric permittivities of prepared powders have been determined in the frequency range of 8.2-12.4 GHz. Al and N codoping results in the increase of the electric permittivities of SiC, compared to the undoped SiC. With the increasing the amounts of Al, the electric permittivities of the Al and N codoped SiC nanopowders are increased. The paper presents a method to adjust dielectric property of SiC powders in the GHz range. These features confer Al-N codoped p-SiC qualifications of the important microwave absorbing material.
机译:通过在氮气氛中自蔓延高温合成(SHS)成功地生产了铝和氮共掺杂的氟碳化硅(P-SiC)纳米粉。通过X射线衍射和扫描电子显微镜的表征证明了Al-N共掺杂的P-SiC纳米粉的形成。在1 MPa N_2气氛中,对产生的粉末进行X射线分析表明,Al和N容纳在SiC晶格中,SiC晶格随着Al含量的增加而增大。在8.2-12.4 GHz的频率范围内确定了所制备粉末的介电常数。与未掺杂的SiC相比,Al和N共掺杂会导致SiC的介电常数增加。随着Al含量的增加,Al和N共掺杂的SiC纳米粉的介电常数增加。本文提出了一种在GHz范围内调节SiC粉末介电性能的方法。这些特征赋予重要的微波吸收材料Al-N共掺杂的p-SiC资格。

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